Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2002-09-27
2008-11-04
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S098000, C257SE33067, C257SE33070
Reexamination Certificate
active
07446344
ABSTRACT:
A radiation-emitting semiconductor chip, having a multilayer structure (100) containing a radiation-emitting active layer (10), and having a window layer (20), which is transmissive to a radiation emitted by the active layer (10) and is arranged downstream of the multilayer structure (100) in the direction of a main radiating direction of the semiconductor component. The window layer (20) has at least one peripheral side area (21), which, in the course from a first main area (22) facing the multilayer structure (100) in the direction toward a second main area (23) remote from the multilayer structure (100), firstly has a first side area region (24) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (22). A peripheral side area (11) of the multilayer structure (100) and at least a part of the beveled, curved or stepped first side area region (24) are coated with a continuous electrically insulating layer (30). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.
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Song, J.L. et al., “Efficiency improvement in Light-Emitting Diodes Based on Geometrically Deformed Chips”, pp. 237-248, SPIE Conference on Light-Emitting Diodes, San Jose, CA, Jan. 1999.
Fehrer Michael
Harle Volker
Kuhn Frank
Zehnder Ulrich
Cohen Pontani Lieberman & Pavane LLP
Osram Opto Semiconductors GmbH
Tran Minh-Loan T
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