Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2004-06-30
2010-02-23
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S745000, C257SE33027, C257SE33034, C257SE33063, C257SE33064, C257SE33065, C257SE33067, C257SE33068, C438S029000, C438S047000, C438S604000, C438S605000, C438S685000, C438S686000
Reexamination Certificate
active
07667240
ABSTRACT:
A radiation-emitting semiconductor chip having an absorbent brightness setting layer between a connection region and a current injection region and/or, as seen from the connection region, outside the current injection region on a front-side radiation coupling-out area of the semiconductor layer sequence. The brightness setting layer absorbs in a targeted manner part of the radiation generated in the semiconductor layer sequence. In another embodiment, a partly insulating brightness setting layer is arranged between the connection region and the active layer. Here, the brightness setting layer includes at least one electrically insulating current blocking region and at least one electrically conductive current passage region via which the connection region is electrically conductively connected to the semiconductor layer sequence such that, during operation of the semiconductor chip, part of the electromagnetic radiation generated in the chip is generated below the connection region and is absorbed by the connection region.
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Jerzy Ruzyllo, Penn State University, “Organic Semiconductors”, Semiconductor Note 11, Mar. 19, 2004.
Stein Wilhelm
Wirth Ralph
Zoelfl Michael
Cohen Pontani Lieberman & Pavane LLP
Ho Hoang-Quan T
Huynh Andy
Osram Opto Semiconductors GmbH
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