Radiation-emitting semiconductor body for a vertically...

Details Radiation-emitting semiconductor body for a vertically... Radiation-emitting semiconductor body for a vertically...

2005-08-23

2008-10-28

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010

Reexamination Certificate

active

07443898

ABSTRACT:
The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

REFERENCES:
patent: 5291502 (1994-03-01), Pezeshki et al.
patent: 5837561 (1998-11-01), Kish et al.
patent: 5994723 (1999-11-01), Sekii et al.
patent: 6778582 (2004-08-01), Mooradian
patent: 2003/0022406 (2003-01-01), Liao et al.
patent: 2003/0048824 (2003-03-01), Shinagawa et al.
patent: 2003/0123495 (2003-07-01), Cox
patent: 2003/0185267 (2003-10-01), Hwang et al.
patent: 2004/0136433 (2004-07-01), Kuznetsov
patent: 2005/0025206 (2005-02-01), Chen
patent: WO 02/13334 (2002-02-01), None
patent: WO 2004/064211 (2004-07-01), None
European Search Report dated Dec. 14, 2005.
Urban Eriksson et al., “A Novel Technology for Monolithic Integration of VCSELs and Heterojunction Bipolar Transistors (HBTs) at 1.55 μm”,CLEO Pacific Rim '97, Ciba, Japan (1997).
Y. Qian et al, “High Performance 1.3 μm Vertical-Cavity Surface-Emitting Lasers with Oxygen-Implanted Confinement Regions and Wafer-Bonded Mirrors”,TuB2, LEOS Summer Topical Meetings, Montreal, Canada (1997).
German Search Report for Application No. 10 2005 036 820.4-54 dated Oct. 24, 2007.

Affiliated with

Also associated with

Rating

Radiation-emitting semiconductor body for a vertically... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Radiation-emitting semiconductor body for a vertically..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation-emitting semiconductor body for a vertically... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4000137