Radiation-emitting semiconducting body with confinement layer

Details Radiation-emitting semiconducting body with confinement layer Radiation-emitting semiconducting body with confinement layer

2004-09-30

2009-02-24

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S077000, C257S103000

Reexamination Certificate

active

07495249

ABSTRACT:
A radiation-emitting semiconductor with a radiation-emitting active layer having InxAlyGa1-x-yP (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is described. The active layer is arranged between a first confinement layer and a second confinement layer. The layers can contain InxAlyGa1-x-yPuN1-u(0≦x≦1, 0≦y≦1, 0≦x+y≦1 and 0≦u<1), BzInxAlyGa1-x-y-zPuN1-u(0≦x≦1, 0≦y≦1, 0<z≦1, 0≦x+y+z≦1 and 0≦u<1) or a II-VI semiconductor material.

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