Radiation-emitting semi-conductor component

Details Radiation-emitting semi-conductor component Radiation-emitting semi-conductor component

2004-06-25

2009-12-08

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

For compound semiconductor

C257S189000, C257S615000, C372S045010

Reexamination Certificate

active

07629670

ABSTRACT:
In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

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