Coherent light generators – Particular active media – Semiconductor
Patent
1995-06-16
1998-09-22
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 44, H01S 319
Patent
active
058125787
ABSTRACT:
A radiation-emitting semiconductor diode, especially a laser having a first and a second cladding layer, an active layer and a mesa which comprises at least the second cladding layer and which lies recessed in a third cladding layer. The second cladding layer comprises a first sub-layer which adjoins the active layer and is comparatively thin, and a second sub-layer which adjoins the first sub-layer and is comparatively thick, while the refractive index of the first sub-layer is lower than that of the second sub-layer. Confinement in the thickness direction of charge carriers and radiation is good in such a diode, while the third cladding layer has a relatively high refractive index (giving a relatively low bandgap). Thus, the third cladding layer has a relatively low aluminium content, while providing good lateral confinement.
REFERENCES:
patent: 4745612 (1988-05-01), Hayakawa et al.
patent: 5276699 (1994-01-01), Kahen
patent: 5289484 (1994-02-01), Hayakawa
patent: 5295148 (1994-03-01), Mori et al.
patent: 5404370 (1995-04-01), Otsubo et al.
patent: 5416790 (1995-05-01), Yodoshi et al.
patent: 5436923 (1995-07-01), Nagai
patent: 5553089 (1996-09-01), Seki et al.
patent: 5586136 (1996-12-01), Honda et al.
patent: 5600667 (1997-02-01), Kidoguchi et al.
"High Power and Low Optical Feedback Noise AlGaAs Single Quantum Well Lasers" by M. Nido et al, Electron. Lett. 16th Feb. 1989, vol. 25, No. 4, pp. 277-278.
"High Power and Low Optical Feedback Noise AlGaAs Single Quantum Well Lasers", Electronic Letters, vol. 25, No. 4, Feb. 1989.
Acket Gerard A.
Schemmann Marcel F. C.
van der Poel Carolus J.
Bovernick Rodney B.
Kang Ellen E.
Tierney Daniel E.
U.S. Philips Corporation
LandOfFree
Radiation-emitting index-guided semiconductor diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Radiation-emitting index-guided semiconductor diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation-emitting index-guided semiconductor diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1630649