Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-03-27
2007-03-27
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S098000, C257S081000, C257S434000, C257S678000, C257S680000
Reexamination Certificate
active
10486953
ABSTRACT:
A radiation-emitting chip (2) with a radiation-transmissive window (5), which has a refractive index nFand has a main area (19), with a multilayer structure (9), which contains a radiation-active layer (10) and adjoins the main area (19) of the window (5), and with a radiation-transmissive medium surrounding the window (5) and having the refractive index n0, the window (5) having at least two boundary areas (6, 7), which form an angle β, for which the relationshipin-line-formulae description="In-line Formulae" end="lead"?90°−αt<β<2αtwhere αt=arc sin(n0
F)in-line-formulae description="In-line Formulae" end="tail"?is satisfied. A radiation-emitting component contains a chip (2) of this type.
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Baur Johannes
Eisert Dominik
Harle Volker
Andujar Leonardo
Cohen Pontani Lieberman & Pavane LLC
Osram Opto Semiconductors GmbH
Tran Tan
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