Radiation-emitting chip and radiation-emitting component

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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Details

C257S098000, C257S081000, C257S434000, C257S678000, C257S680000

Reexamination Certificate

active

10486953

ABSTRACT:
A radiation-emitting chip (2) with a radiation-transmissive window (5), which has a refractive index nFand has a main area (19), with a multilayer structure (9), which contains a radiation-active layer (10) and adjoins the main area (19) of the window (5), and with a radiation-transmissive medium surrounding the window (5) and having the refractive index n0, the window (5) having at least two boundary areas (6, 7), which form an angle β, for which the relationshipin-line-formulae description="In-line Formulae" end="lead"?90°−αt<β<2αtwhere αt=arc sin(n0
F)in-line-formulae description="In-line Formulae" end="tail"?is satisfied. A radiation-emitting component contains a chip (2) of this type.

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