Radiation emitter component

Coherent light generators – Particular active media – Semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 94, H01S 318, H01L 3300

Patent

active

059995521

ABSTRACT:
A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.

REFERENCES:
patent: 4143394 (1979-03-01), Schoberl
patent: 4255688 (1981-03-01), Nagasawa
patent: 5068866 (1991-11-01), Wada et al.
patent: 5414293 (1995-05-01), Broom
patent: 5744828 (1998-04-01), Nozaki et al.
"Effect of growth interruption on performance of AIGaAs/InGaAs/GaAs quantum well lasers" (Bugge et al.), Journal of Crystal Growth, vol. 145, 1994, pp. 907-910; (No Month Available).
"Metalorganic chemical vapor deposition growth of high-quality and highly uniform strained InGaAs quantum wells in a high-speed rotating-disk reactor" (Karakida et al.), Journal of Crystal Growth, vol. 145, 1994, pp. 662-667 (No Month Available).
"660nm Wavelength GaInAsP/AIGaAs Distributed Feedback Lasers", Chong et al Electronic Letters, vol. 24, No. 7, Mar. 31, 1988, pp. 416-418.
"GaAs/AIGaAs quantum well laser for high-speed applications" (Lang et al.), IEEE Proceedings-J, vol. 138, No. 2, Apr. 1991, pp. 117-121.
"Threshold current on short cavity uncoated strained-layer InGaAs-GaAs MOW lasers" (Xiao et al.), Conference on Lasers and Electro-Optics, vol. 12, pp. 380-381; Oct. 5, 1992.
"Low-threshold InGaAs strained-layer quantum well laser (.lambda.=0.98.mu.m) with GaInP cladding layers prepared by chemical beam epitaxy" (Tsang et al.), Applied Physics Letters 61(7), Aug, 17, 1992, pp. 755-757.
"Tensile-Strained AIGaAsP-and InGaAsP-(AIGa).sub.0.5 In.sub.0.5 P Quantum Well Laser Diodes for TM-Mode Emission in the Wavelength Range 650<.lambda.<850 nm" (Bour et al.), IEEE Photonic Technology Letters, No. 11, Nov. 1994; pp. 1283-1285.
"High-power, high-temperature InGaAs-AIGaAs strained-layer quantum-well diode lasers" (Wang et al.), Electronics Letters, vol. 30, No. 8, Apr. 14, 1994; pp. 646-648.
Patent Abstracts of Japan No. 52-149081 (Ohara), dated Dec. 10, 1977;.
Patent Abstracts of Japan No. 62-130573 (Hayashi), dated Jun. 12, 1987.
Patent Abstracts of Japan No. 53-27026 (Ishizaki), dated Dec. 10, 1993.
Patent Abstract of Japan No. 62-252181 (Tamura), dated Nov. 2, 1987.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Radiation emitter component does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Radiation emitter component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation emitter component will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-832486

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.