Radiation dosimeter

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

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Details

25037005, G01T 124, H01C 31115, G11C 1140, H01L 29792

Patent

active

059490756

ABSTRACT:
A radiation dosimeter including a series circuit of an MONOS semiconductor and a resistor or an MOS or MONOS semiconductor device whose channel conductivity type is opposite from that of the first said MONOS semiconductor device. The MONOS semiconductor device is an electrically rewritable non-volatile memory cell having a gate insulating film consisting of a tunnel oxide film, a silicon nitride film and a top oxide film. The resistor is made of polycrystalline silicon which is little affected by exposure to radiation. The series circuit is connected between a source voltage and ground (GND) and a detection signal is obtained from the connection point between the members of the series circuits.

REFERENCES:
patent: 4431920 (1984-02-01), Srour et al.
patent: 5589699 (1996-12-01), Araki
IEEE Transactions of Nuclear Science, vol. 42, No. 2, Apr. 1995.

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