Radiation dose rate hardened light detector

Details Radiation dose rate hardened light detector Radiation dose rate hardened light detector

1978-01-03

1979-04-03

Edlow, Martin H.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 15, 357 4, 250211J, H01L 2714

Patent

active

041480503

ABSTRACT:
A radiation dose rate hardened light detector uses a Schottky diode island on a sapphire substrate. The thickness of the silicon is carefully adjusted to produce interference absorption at the light wavelength of interest. The light enters the silicon through the sapphire and is reflected off a metal electrode to produce the interference at the silicon-sapphire interface.

REFERENCES:
patent: 3393088 (1968-07-01), Manasevit
patent: 3704376 (1972-11-01), Lehovec
patent: 3971057 (1976-07-01), Connors
Anderson et al., Solid State Electronics, 1976, vol. 19, pp. 973-974.

Affiliated with

Also associated with

Rating

Radiation dose rate hardened light detector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Radiation dose rate hardened light detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation dose rate hardened light detector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1749342