Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2006-01-27
2009-11-03
Porta, David P (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
C257S614000
Reexamination Certificate
active
07612345
ABSTRACT:
A radiation detector crystal is made from CdxZn1-xTe, where 0≦x≦1; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.
REFERENCES:
patent: 4642799 (1987-02-01), Glass
patent: 6331705 (2001-12-01), Eisen et al.
patent: 6649915 (2003-11-01), Wright et al.
patent: 2003/0209184 (2003-11-01), Kazandjian et al.
patent: 2004/0046123 (2004-03-01), Dausch
patent: 2007/0178039 (2007-08-01), D'Evelyn et al.
patent: 2007/0181056 (2007-08-01), D'Evelyn et al.
Yu and Ridgway, Zinc and phosphorus co-implantation in indium phosphide, Applied Physics Letters, Jul. 6, 1998, pp. 52-54, vol. 73, No. 1, American Institute of Physics.
Yu and Ridgway, Zinc and group V element co-implantation in indium phosphide, Nuclear Instruments and Methods in Physics Research, Oct. 12, 1999, pp. 65-71, vol. B, Elsevier Science B.V.
Dadgar et al., Ruthenium a new thermally stable compensator in InP, 10th International Conference on Indium Phosphide and Related Materials, May 11-15, 1998, pp. 57-59, IEEE, Tsukuba, Japan.
Van Geelen et al., Ruthenium doped high power 1.48 um SIPBH laser, 11th International Conference on Indium Phosphide and Related Materials, May 16-20, 1999, pp. 203-206, IEEE, Davos, Switzerland.
Dadgar et al., Ruthenium—a superior compensator of InP, Applied Physics Letters, Dec. 28, 1998, pp. 1-3.
Dadgar et al., Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition, Proc. of the 9th IC-MOVPE, 1998, pp. 1-5, La Jolla, CA USA.
Barnes and Zanio, Thermally stimulated current measurement of traps in detector-grade CdTe, IEEE Transactions on Nuclear Science, Feb. 1976, pp. 177-181, vol. NS-23, No. 1.
Barnes and Zanio, Photoluminescence in high-resistivity CdTe:In, Journal of Applied Physics, Sep. 1975, pp. 3959-3964, vol. 46, No. 9, American Institute of Physics.
Kuhn et al., Evidence of deep donor in CdTe, Journal of Crystal Growth, 1992, pp. 660-665, vol. 117, Elsevier Science Publishers B.V.
Cameron Scott E.
Chakrabarti Utpal K.
Mattera, Jr. Vincent D.
Szeles Csaba
Endicott Interconnect Technologies, Inc.
Gaworecki Mark R
Hinman, Howard & Kattell
Porta David P
LandOfFree
Radiation detector crystal and method of formation thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Radiation detector crystal and method of formation thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation detector crystal and method of formation thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4122049