Radiation detector and radiation detecting element

Details Radiation detector and radiation detecting element Radiation detector and radiation detecting element

2006-11-07

2006-11-07

Porta, David (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

Reexamination Certificate

active

07132666

ABSTRACT:
The invention relates to a radiation detector. The detector includes an insulating substrate, a thin-film layer made of semiconductor or insulator formed on the surface of the substrate, at least a pair of electrodes provided on the thin-film layer, voltage applying means for applying a voltage across the electrodes and current detection means for detecting current taken from the electrodes, wherein radiation is detected using the fact that conductance of the thin-film layer changes linearly with respect to radiation intensity due to irradiation with radiation. Preferably, the thin-film layer comprises a metallic oxide. The metallic oxide comprises either one or any combination of two or more selected from titanium oxide, aluminum oxide (alumina), zirconium oxide, iron oxide, zinc oxide, yttrium oxide, manganese oxide, neodymium oxide, ceric oxide, tin oxide, or strontium titanate.

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Huzimura, R., et al., “TSEE Response of Sputtered Mg0 Films to Low-Energy X-Ray Doses,”Japanese Journal of Applied Physics, vol. 29, No. 8, pp. 1600-1603 (Aug. 1990).

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