Radiation detector and method

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

Reexamination Certificate

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Reexamination Certificate

active

07612344

ABSTRACT:
A radiation detector and method. One embodiment provides a radiation detector including a semiconductor body with a first base zone of a first conduction type and with at least one second base zone arranged at least partly in the first base zone, extending in a vertical direction of the semiconductor body and doped complementarily to the first base zone. The method provides a semiconductor substrate. Several epitaxial layers are produced arranged one above another on the semiconductor substrate. The layers in each case include a basic doping of the first conduction type and together with the semiconductor substrate form the semiconductor body. Semiconductor zones of a second conduction type are produced.

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Eranen et al., “Silicon semi 3D radiation detector,”, 2004, IEEE Nuclear Science Symposium Conference Record, vol. 2, pp. 1231-1235.
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Kenney et al., Silicon Detectors with 3-D Electrode Arrays: Fabrication and Initial Test Results, IEEE, 1999, pp. 1224-1236.
Kenney et al., Observation of Beta and X Rays with 3-D-Architecture Silicon Microstrip Sensors, IEEE, 2001, pp. 189-193.

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