Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1987-09-29
1991-02-26
Fields, Carolyn E.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
25037009, G01T 124
Patent
active
049964321
ABSTRACT:
A radiation detector providing high energy resolving power, wherein a semiconductor crystal block having a thickness D has two mutually opposed surfaces and is designed to convert incident photons into electron-hole pairs. An electrode connected to a ground is fixed to one of these surfaces and receives the incident photons and another electrode connected to a positive high voltage is fixed to the other surface of the semiconductor crystal block so that the mean free path of electrons of the pairs is substantially larger than thickness D and the mean free path of holes of the pairs is substantially smaller than thickness D, and the positions of the conversion of photons to electron-hole pairs with respect to the electrode connected to a positive high voltage is substantially constant. Thickness D is determined by the relationship of D>>l/.mu..sub.i wherein .mu..sub.i is absorption coefficient of the semiconductor block so that the converted electrical changes are generated near the electrode connected to a ground.
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Bell et al., "Cadmium Telluride, Grown From Tellurium Solution, as a Material for Nuclear Radiation Detectors", Phys. Stal. Sol. (a)1(3), pp. 375-387, 1970.
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IEEE Trans. On Nuclear Science. vol. NS-23 (1976), pp. 131 to 137, Swierkowski, "A Comprehensive Model for Predicting Semiconductor Performance".
Nuclear Instruments and Methods, vol. 162 (1979) pp. 113 to 123, Whited et al., "Cadmium telluride and Mercuric Iodide Gamma Radiation Detectors".
Fields Carolyn E.
Kabushiki Kaisha Toshiba
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