Radiation detector

Details Radiation detector Radiation detector

2008-01-30

2011-12-06

Coleman, William D (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S347000, C257S433000, C257SE27132, C257SE27131, C250S265000, C250S267000, C349S042000, C349S152000, C349S138000

Reexamination Certificate

active

08071980

ABSTRACT:
A radiation detector that includes a charge conversion layer, a substrate, an electrode layer, an intermediary layer and wiring is provided. The substrate includes a lower electrode portion that collects charge generated by the charge conversion layer. The electrode layer includes an upper electrode portion and an extended electrode portion. The upper electrode portion is laminated on the charge conversion layer. The extended electrode portion extends from the upper electrode portion down a side face of the charge conversion layer to a region on the substrate at which the charge conversion layer is not present. The intermediary layer is formed from between the charge conversion layer and the upper electrode portion to between the extended electrode portion and the substrate. The wiring is electrically connected with the extended electrode portion at the region on the substrate at which the charge conversion layer is not present.

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Notice of Reasons for Rejection, dated Sep. 27, 2011, issue in corresponding JP Application No. 2007-094273, 4 pages in English and Japanese.

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