Radiation detector

Details Radiation detector Radiation detector

2007-06-19

2007-06-19

Gagliardi, Albert J. (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

C250S370010, C250S370050, C250S370090

Reexamination Certificate

active

10942846

ABSTRACT:
The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 Å. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 Å or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.

REFERENCES:
patent: 5396072 (1995-03-01), Schiebel et al.
patent: 5578814 (1996-11-01), Dadali et al.
patent: 6895077 (2005-05-01), Karellas et al.
patent: 2001/0020683 (2001-09-01), Teranuma et al.
patent: 2003/0034464 (2003-02-01), Ogawa
patent: 1009038 (2000-06-01), None
patent: 2001-026443 (2001-01-01), None

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