Radiation detector

Details Radiation detector Radiation detector

1995-02-07

1996-12-03

Hannaher, Constantine

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

250372, H01L 31101

Patent

active

055810870

ABSTRACT:
A radiation detector includes a photodiode composed of an .alpha.-SiC substrate of a first conductivity type, a first .alpha.-SiC layer of the first conductivity type epitaxially formed on the .alpha.-SiC substrate, a second .alpha.-SiC layer of a second conductivity type having higher carriers concentration than the first .alpha.-SiC layer and epitaxially formed on the first .alpha.-SiC layer, a first electrode formed on the .alpha.-SiC substrate in ohmic contact, and a second electrode formed on the second .alpha.-SiC layer in ohmic contact; and a phosphor layer disposed on the photodiode to emit ultraviolet-rays by exposure of radiations.

REFERENCES:
patent: 5049950 (1991-09-01), Fujii et al.
patent: 5093576 (1992-03-01), Edmond et al.
"Blue LED's, UV photodiodes and high-temperature rectifiers in 6H-SiC", J. A. Edmond et al., Physica B 185, pp. 453-460 (1993).
"Silicon Carbide UV Photodiodes", D. M. Brown et al., IEEE Transactions On Electron Devices, 40:2(325-333) 1993.
"Silicon carbide ultraviolet photodetectors", R. G. Verenchikova et al., Sov. Phys. Semicond. 26:6(565-568) 1992.

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