Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1994-03-02
1998-01-20
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 31, 257 36, 2503362, 505817, 505874, H01L 2941, H01L 2988, H01L 3106, H01L 31102
Patent
active
057104379
ABSTRACT:
A radiation detecting device including a superconducting tunnel junction having a three-layer structure formed by depositing a lower electrode, a tunnel barrier layer, and an upper electrode in sequence. The upper electrode, the tunnel barrier layer and lower electrode have substantially aligned side walls around substantially their entire perimeters such that a cross-section of the three-layer structure along a path perpendicular to a direction of the deposition is substantially constant in shape and size along the direction of the deposition and such that no portion of the lower electrode or the upper electrode extends beyond the tunnel barrier layer. At least one of the upper electrode and the lower electrode is made of superconducting material.
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Kurakado Masahiko
Matsumura Atsuki
Takahashi Toru
Jackson Jerome
Nippon Steel Corporation
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