Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2008-01-22
2008-11-25
Porta, David P (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
Reexamination Certificate
active
07456410
ABSTRACT:
An underlayer of a phosphor layer is disposed on a sensor panel including two-dimensionally arranged photoelectric conversion devices. The surface of the underlayer is subjected to atmospheric pressure plasma treatment. The phosphor layer is formed on the surface-treated underlayer. Then, the phosphor layer is covered with a moisture-resistant protective layer, a reflection layer, and another protective layer. Thus, the phosphor layer is prevented from peeling due to adhesion failure, and is constituted of uniformly shaped crystals by vapor deposition. A resulting radiation detecting apparatus exhibits high sensitivity and high definition, producing a uniform photoelectric conversion efficiency.
REFERENCES:
patent: 5166512 (1992-11-01), Kubo
patent: 6262422 (2001-07-01), Homme et al.
patent: 6278118 (2001-08-01), Homme et al.
patent: 6350844 (2002-02-01), Ono et al.
patent: 6469305 (2002-10-01), Takabayashi et al.
patent: 6469307 (2002-10-01), Takabayashi et al.
patent: 6476395 (2002-11-01), Boerner et al.
patent: 6824872 (2004-11-01), Coates et al.
patent: 6849306 (2005-02-01), Fukuda et al.
patent: 7019303 (2006-03-01), Homme et al.
patent: 7087908 (2006-08-01), Homme
patent: 7105830 (2006-09-01), Nagano et al.
patent: 2002/0017613 (2002-02-01), Homme et al.
patent: 2003/0116281 (2003-06-01), Herbert et al.
patent: 2003/0173493 (2003-09-01), Homme et al.
patent: 2004/0000644 (2004-01-01), Homme
patent: 2004/0178350 (2004-09-01), Nagano et al.
Chung et al. “Atmospheric RF Plasma Effects on the Film Adhesion Property”. Thin Solid Films, vol. 447-448 (Jan. 30, 2004), pp. 354-358.
Matsushita Electrical Works New Technical Report, pp. 13 to 17 (Apr. 2000).
Soma, M. et al. “Improvement of Adhesion Characteristics Using Atmospheric Pressure Plasma Processing.” Matsushita Electric Works Technical Report, No. 79 (Nov. 2002), p. 61-66.
Translation of Soma, M. et al. “Improvement of Adhesion Characteristics Using Atmospheric Pressure Plasma Processing.” Matsushita Electric Works Technical Report, No. 79 (Nov. 2002), p. 61-66.
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Gaworecki Mark R
Porta David P
LandOfFree
Radiation detecting apparatus and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Radiation detecting apparatus and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation detecting apparatus and method for manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4037018