Radiation detecting apparatus

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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357 30, 357 15, 357 55, H01L 2714

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active

048291730

ABSTRACT:
A semiconductor photodetector having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi.sub.2, disposed therein. The rods form Schottky barriers with the semiconductor material. An ohmic contact is made to several of the rods at one end, and an ohmic contact is made to the semiconductor material of the matrix. Incident radiation is directed at a surface of the body containing the opposite ends of the rods. A detector is connected between the two ohmic contacts and detects current flow generated in response to incident radiation impinging on the body.

REFERENCES:
patent: 4482907 (1984-11-01), Jay
patent: 4624045 (1986-11-01), Ishihara et al.
patent: 4660066 (1987-04-01), Reid
Ditchek, "Preparation and Electrical Properties of a Directionally Solidified Ge-TiGe.sub.2 Eutectic", J. Appl. Phys., 57(6); Mar. 15, 1985; pp. 1961-1967.
Ditchek, "Bridgman and Czochralski Growth of Ge-TiGe.sub.2 Eutectic Composites", Journal of Crystal Growth, 75 (1986), pp. 264-268.

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