Radiant energy converter having sputtered CdSiAs.sub.2 absorber

Details Radiant energy converter having sputtered CdSiAs.sub.2 absorber Radiant energy converter having sputtered CdSiAs.sub.2 absorber

1981-08-21

1983-08-09

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136260, 136261, 204192S, 204192P, 357 30, 357 59, 427 74, 29572, H01L 3106, H01L 3118, C23C 1500

Patent

active

043980554

ABSTRACT:
Thin film radiant energy converter having a sputtered CdSiAs.sub.2 photovoltaic absorber layer and a thermally evaporated CdS top layer. The sputtering technique with multiple targets (Cd, Si, As) is used to obtain stoichiometric CdSiAs.sub.2 thin films which are polycrystalline and have large grain size to thereby reduce grain boundary recombinations of the photogenerated electrons.

REFERENCES:
N. K. Annamalai, "CdS-Sputtered Cu.sub.2 S Solar Cells", Conf. Record, 12th IEEE Photovoltaic Specialists Conf., (1976), pp. 547-548.
W. W. Anderson et al., "Magnetron Reactive Sputtering Deposition of Cu.sub.2 S/CdS Solar Cells", Proceedings, 2nd European Community Photovoltaic Solar Energy Conf., (1979), Reidel Publishing Co., pp. 890-897.
J. Piekoszewski et al., "RF-Sputtered CuInSe.sub.2 Thin Films", Solar Energy Materials, vol. 2, pp. 363-372, (1980).
J. E. Greene et al., "Epitaxial Growth of In.sub.1-x Ga.sub.x Sb Thin Films by Multitarget, RF Sputtering", J. Appl. Phys., vol. 47, pp. 2289-2297, (1976).
A. F. Carroll et al., "Compositional Studies Related to Sputtered _Cd-Si-As Films", J. Electrochem. Soc., vol. 128, pp. 1769-1773, (1981).
L. C. Burton et al., "Studies of CdSiAs.sub.2 for Photovoltaic Applications", Proceedings 1979 Southeastern Conf., (Roanoke, Va.), pp. 25-28.

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