Radiant energy activated semiconductor switch

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307252B, 307252VA, 307311, 357 22, 357 30, 357 38, 357 39, H03K 1772, H03K 1794, H03K 17687

Patent

active

042950589

ABSTRACT:
Various circuits and combinations of radiant energy responsive transducer means such as photovoltaic diodes connected to the gate of a depletion mode FET whose source and drain are connected to the gate and cathode of a thyristor, are disclosed to provide a semiconductor switch which is triggered into conduction solely by a small amount of radiant energy, without the need for a second triggering energy source, and which also affords immunity to unwanted dv/dt and temperature induced turn-on. Various modes of operation are disclosed, including the thyristor self-triggering into conduction, and/or being of the light-activated type itself and being directly triggered by impinging light, and/or being triggered by the light-responsive diode bias, and/or being triggered by a small bias supplied from a second set of photovoltaic diodes connected to the thyristor gate. Other combinations are disclosed providing zero-cross firing.

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"Opto-Coupled FET Developed by GE", Electronic News, Nov. 27, 1978, p. 66.
R. I. Chen et al., "A Bilateral Analog FET Optocoupler", IEEE Transactions on Consumer Electronics, vol. CE 24, No. 3, Aug. 1978, pp. 247-260.
F. E. Gentry et al., "Semiconductor Controlled Rectifiers", Prentice-Hall, Inc. Englewood Cliffs, N.J., 1964, p. 292.

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