Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Patent
1993-05-10
1995-08-22
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
257401, H01L 27118
Patent
active
054442753
ABSTRACT:
Gate width directions of transistors are taken in circumferential directions surrounding a certain point as a center. Or transistors are constructed by a plurality of straight lines extending in radial directions of the certain point and intersecting each other at the same angle. Hereby, basic cells can be assembled on a master slice symmetrically in plural directions. There are arranged in a mutual adjacent relation in which channel layers located under one opposing gate electrodes are formed into P channels and channel layers located under the other opposing gate electrodes are formed into N channels. Otherwise, there are arranged alternately with respect to P channels and N channels in an adjacent relation basic cells in which all channel layers located under all gate electrodes in the same basic cell are formed by any type of the P channel and the N channel.
REFERENCES:
patent: 4799096 (1989-01-01), Koeppe
Kugishima Masahiro
Nariishi Masaaki
Sato Hiroyuki
Yamakawa Noboru
Yamamoto Takahiro
Kawasaki Steel Corporation
Larkins William D.
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