Radial emitter pressure contact type semiconductor devices

Details Radial emitter pressure contact type semiconductor devices Radial emitter pressure contact type semiconductor devices

1976-01-02

1977-07-12

James, Andrew J.

357 46, 357 56, 357 68, H01L 2342, H01L 2344, H01L 2346, H01L 2702

Patent

active

040358313

ABSTRACT:
The pressure contact type semiconductor device comprises a transistor including a semiconductor substrate, an emitter region having portions protruding from the surface of the substrate and extending in the radial direction from a circle spaced a definite distance from the center of the substrate, a base region surrounding the protruding portions of the emitter region, emitter electrodes provided on respective protruding portions of the emitter region, a collector electrode mounted on the other surface of the substrate, and an electroconductive plate commonly urged against the emitter electrodes.

REFERENCES:
patent: 3457471 (1969-07-01), Moroney et al.
patent: 3525910 (1970-08-01), Philips
patent: 3729659 (1973-04-01), Bennett et al.
patent: 3755722 (1973-08-01), Harland et al.
patent: 3877059 (1975-04-01), Dockendorf

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