Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1993-06-28
1994-05-17
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257281, 257472, H01L 2948, H01L 2956, H01L 2964
Patent
active
053130839
ABSTRACT:
An advanced MESFET switching structure which includes an interdigitated source region and an interdigitated drain region, also includes a gate electrode region disposed between adjacent portions of the interdigitated source and drain regions having a series gate electrode in Schottky barrier contact therewith. The use of the series connect gate electrode rather than conventional parallel coupled gate fingers eliminates the need for an airbridge overlays to interconnect the source regions as in a conventional MESFET transducer. Moreover, the topography permits smaller MESFET structures and thus higher integration of circuits employing the advanced MESFET switch structure. The smaller transistors will also have lower parasitic reactances. In a preferred embodiment, all interconnections for drain, gate, and source electrodes are disposed on the active layer portion of the transistor providing an even smaller transistor structure.
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patent: 4315272 (1982-02-01), Vorhaus
patent: 4364073 (1982-12-01), Becke et al.
patent: 4455565 (1984-06-01), Goodman et al.
patent: 4721983 (1988-01-01), Frazier
"Field Effect Type Semiconductor Device", Patent Abstract of Japan, vol. 9, No. 315 (E-365) [2038], Dec. 11, 1985.
"Gallium Arsenide Materials, Devices, and Circuits", edited by M. J. Howes et al., published in 1985.
Larkins William D.
Meier Stephen D.
Raytheon Company
Sharkansky R. M.
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