R. F. sputtering method and apparatus

Details R. F. sputtering method and apparatus R. F. sputtering method and apparatus

1974-06-27

1978-01-24

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, C23C 1500

Patent

active

040702642

ABSTRACT:
Disclosed is R.F. sputtering apparatus for etching the surface of an object, the apparatus comprising a vacuum chamber with the conventional vacuum creating means associated therewith as well as a pump for supplying an ionizable gas into the vacuum chamber. An R.F. power supply is connected to a plate like cathode electrode in the chamber, the plate including a plurality of object supports extending therethrough and including means for holding an object to be etched. A luminescent discharge area, including a Crooks dark space area has a thickness "e" surrounding the plate and the object being etched, the objects being etched being spaced one from the other by a distance "d".ltoreq.2"e". The objects being etched are also preferably supported a distance "h" from the cathode (plate) wherein "h".gtoreq.2"e" whereby ion bombardment of the cathode electrode during the sputter operation is inhibited. Also disclosed is a method for employing the above described apparatus.

REFERENCES:
patent: 3507248 (1970-04-01), Seeley et al.
patent: 3763031 (1973-10-01), Scow
patent: 3844924 (1974-10-01), Cunningham et al.
Maissel et al., "Handbook of Thin Film Technology," McGraw Hill, N.Y. (1970), pp. 7-49 and 7-50.

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