QWIP with electron launcher for reducing dielectric...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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Details

C257S017000, C257S185000, C257SE29078, C257SE31022, C257SE31033, C257SE31054

Reexamination Certificate

active

07372068

ABSTRACT:
A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving responsivity. A graded collector barrier may also be included for reverse bias applications. The configuration operates to eliminate or otherwise reduce image artifacts or persistence associated with dielectric relaxation effect in low-background applications.

REFERENCES:
patent: 5384469 (1995-01-01), Choi
patent: 5459332 (1995-10-01), Carruthers
patent: 6211529 (2001-04-01), Gunapala et al.
patent: 6674091 (2004-01-01), Gunapala et al.
patent: 2002/0074542 (2002-06-01), Gunapala et al.
PCT Search Report dated May 26, 2006 of Patent Application No. PCT/US05/08121 filed Mar. 10, 2005.
Gunapala, Sarath et al., “MQW Based Blocked Intersubband Detector for Low Background Operation”, NASA Tech Briefs, Jul. 2001, pp. 1-2, NPO-21073, NASA's Jet Propulsion Laboratory, Pasadena, CA.
Bandara, Sumith et al., “Quantum Well Infrared Photodetector for Low Background Applications”, www.eps.org, Mar. 2001, p. 1, Jet Propulsion Laboratory.
Gunapala, S. et al., “Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays”, Semiconductors and Semimetals, 1999, pp. 1-83, vol. 62.
Gunapala, S. et al., “640×486 Long-wavelength Two-color GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera”, pp. 1-24.
Gunapala, S. et al., “640×512 Pixel Four-Band, Broad-Band, and Narrow-Band Quantum Well Infrared Photodetector Focal Plane Arrays”, pp. 1-12.

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