Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-05-13
2008-05-13
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S017000, C257S185000, C257SE29078, C257SE31022, C257SE31033, C257SE31054
Reexamination Certificate
active
07372068
ABSTRACT:
A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving responsivity. A graded collector barrier may also be included for reverse bias applications. The configuration operates to eliminate or otherwise reduce image artifacts or persistence associated with dielectric relaxation effect in low-background applications.
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Reisinger Axel R
Sundaram Mani
BAE Systems Information and Electronic Systems Integration Inc.
Sefer A.
Vern Maine & Associates
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