Quaternary collector InAlAs-InGaAlAs heterojunction bipolar tran

Details Quaternary collector InAlAs-InGaAlAs heterojunction bipolar tran Quaternary collector InAlAs-InGaAlAs heterojunction bipolar tran

1995-06-02

1997-05-20

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, H01L 310328, H01L 310336

Patent

active

056314779

ABSTRACT:
An InAlAs/InGaAlAs heterojunction bipolar transistor that includes a constant quaternary InGaAlAs collector layer. Graded InGaAlAs collector layers are provided on each side of the quaternary collector layer to minimize transitions through the constant collector layer. The InAlAs/InGaAlAs HBT may also include one or more of a graded InGaAlAs emitter-base transition region, a graded-doping InGaAs base layer, and a graded-composition InGaAlAs base layer.

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