Quaternary alloy

Details Quaternary alloy Quaternary alloy

1982-05-06

1984-03-27

Rutledge, L. Dewayne

Alloys or metallic compositions

Containing over 50 per cent metal but no base metal

148171, C22C 3000

Patent

active

044393997

ABSTRACT:
A wide band gap semiconductor alloy having a combination of P, In, Te, and Zn is formed by liquid phase epitaxy on an InP substrate. This alloy can be used for the formation of p-n junctions.

REFERENCES:
patent: 2956023 (1960-10-01), Fredrick et al.
patent: 3705659 (1972-12-01), Kun
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 3962716 (1976-06-01), Petroff et al.
patent: 3982261 (1976-09-01), Antypas
patent: 4072544 (1978-02-01), DeWinter et al.
patent: 4190470 (1980-02-01), Walline
W. Michael Yim, "Solid Solutions in the Pseudobinary (III-V)-(II-VI) Systems and Their Optical Energy Gaps", May, 1969 Journal of Applied Physics, vol. 40, No. 6, pp. 2617-2622.

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