Quasicomplementary MESFET logic circuit with increased noise imu

Details Quasicomplementary MESFET logic circuit with increased noise imu Quasicomplementary MESFET logic circuit with increased noise imu

1990-05-01

1991-07-09

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307475, H03K 19017

Patent

active

050308521

ABSTRACT:
Disclosed is a logic circuit performing a quasi-complementary operation. This logic circuit includes a load transistor having a drain connected to a first power supply, a drive transistor having a source connected to a second power supply, a level shift diode connected between a source of the load transistor and a drain of the drive transistor, a resistor connected between a gate of the load transistor and the first power supply, an input portion for applying a signal for complementarily turning on the load transistor and drive transistor in response to an input signal, and a resistor connected between a gate of the drive transistor and the second power supply. Therefore, a gate potential of the load transistor is set to a potential which is always higher than a drain voltage, so as to prevent an output high level from being lowered and expand a logic voltage swing. Further, there is disclosed a logic circuit in which a plurality of quasi-complementary logic circuits are coupled by a wired logic. This circuit configuration enables the number of gate stages to be reduced in case where the plurality of logic circuits are coupled.

REFERENCES:
patent: 4712022 (1987-12-01), Vu
patent: 4831284 (1989-05-01), Anderson et al.
patent: 4931670 (1990-06-01), Ting
patent: 4967102 (1990-10-01), Mahler
Silicon MESFET Digital Circuit Techniques, Hartring, Rosario, Pickett, IEE Journal of Solid State Circuits, vol. SC-16, No. 5, Oct. 1981.
"Simulation of Load-Current-Controlled GaAs Logic Circuits", by Norio Akamatsu, Collected Paters of Electronic Information Communication Meeting, 87/2, vol. J70-D No. 2, pp. 290-297.

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