Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2008-09-29
2011-10-04
Pham, Hoai V (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S013000, C257S077000, C257SE25019, C257SE21527, C438S022000, C438S048000
Reexamination Certificate
active
08030638
ABSTRACT:
A compound semiconductor device is manufactured by using a polycrystalline SiC substrate, the compound semiconductor device having a buffer layer being formed on the substrate and having a high thermal conductivity of SiC and aligned orientations of crystal axes. The method for manufacturing the compound semiconductor device includes: forming a mask pattern on a polycrystalline SiC substrate, the mask pattern having an opening of a stripe shape defined by opposing parallel sides or a hexagonal shape having an apex angle of 120 degrees and exposing the surface of the polycrystalline SiC substrate in the opening; growing a nitride semiconductor buffer layer, starting growing on the polycrystalline SiC substrate exposed in the opening of the mask pattern, burying the mask pattern, and having a flat surface; and growing a GaN series compound semiconductor layer on the nitride semiconductor buffer layer.
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International Search Report of PCT/JP2006/306508, date of mailing Jun. 27, 2006.
Fujitsu Limited
Fujitsu Patent Center
Pham Hoai V
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