Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-12-06
2005-12-06
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C438S020000, C438S322000, C438S339000
Reexamination Certificate
active
06972472
ABSTRACT:
An emitter stack for a quasi-self-aligned bipolar (NPN or PNP) transistor is formed where two layers over the emitter of a silicon substrate are windowed in a manner to under cut the top layer thereby exposing the substrate material. The emitter polysilicon structure is then formed over the window and conformally extends into the undercut region thereby widening the emitter region and so reducing the distance between the edge of the emitter and the extrinsic base (the base link distance) and therefore reducing the total base resistance of the transistor.
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Hahn Daniel J.
Leibiger Steven M.
Szendrei Laurence M.
Cesari and McKenna LLP
Fairchild Semiconductor Corporation
Le Thao P.
Paul, Esq. Edwin H.
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