Quasi one-dimensional electron gas field effect transistor

Details Quasi one-dimensional electron gas field effect transistor Quasi one-dimensional electron gas field effect transistor

1991-06-03

1992-08-11

James, Andrew J.

357 4, 357 22, H01L 29161, H01L 29205, H01L 2712, H01L 2980

Patent

active

051384051

ABSTRACT:
A quasi one-dimensional electron gas FET with semiconductor layer of a stripe structure formed on a semi-insulating semiconductor substrate. A gate electrode is formed traversing the exposed portions of the semiconductor substrate and the side faces and the upper face of the stripe structure, and a source electrode and a drain electrode are formed on the respective ends of the stripe structure with the gate electrode in between. The stripe structure consists of a potential barrier layer, an undoped channel layer and an electron supplying layer.

REFERENCES:
patent: 4591889 (1986-05-01), Gossard et al.
patent: 5079594 (1992-01-01), Mitsuyu et al.
patent: 5081512 (1992-01-01), Kelly et al.
Mochigetsu "Sattellite Broadcasting reception HEMTs" Nikkei Microdevices Apr. 4, 1989, pp. 91-95.
"Quasi-one-dimensional Channel GaAs/AlGaAs Modulation Doped FET Using Corrugated Gate Structure," Okada et al, Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials, Tokyo, pp. 503-506 (1988).

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