Quasi four-level Tm:LuAG laser

Details Quasi four-level Tm:LuAG laser Quasi four-level Tm:LuAG laser

1996-01-29

1997-06-17

Scott, Jr., Leon

Coherent light generators

Particular active media

Insulating crystal

372 75, H01S 316

Patent

active

056404085

ABSTRACT:
A quasi four-level solid-state laser is provided. A laser crystal is disposed in a laser cavity. The laser crystal has a LuAG-based host material doped to a final concentration between about 2% and about 7% thulium (Tm) ions. For the more heavily doped final concentrations, the LuAG-based host material is a LuAG seed crystal doped with a small concentration of Tm ions. Laser diode arrays are disposed transversely to the laser crystal for energizing the Tm ions.

REFERENCES:
patent: 5088103 (1992-02-01), Esterowitz et al.
Rodriquez et al; "Quasi-Two-Level Laser Operation of Tm:LuAg", in Coinference on Laser and Electro-Optics, vol. 8; pp. 174-175; Washington D.C.. 1994.
A. A. Kaminskii et al., "Investigation of Stimulated Emission From Lu.sub.3 Al.sub.5 O.sub.12 Crystal With Ho.sup.3+, Er.sup.3+, and Tm.sup.3+ Ions", Phys. Status Soledi 18a,(1973), pp. K-31-K33.
W. J. Rodriquez et al., "Quasi-Two-Level Laser Operation of Tm:LuAG", in Conference on Laser and Electro-Optics, vol. 8, Optical Soc. of Am. Technical Digest Serie, Washhington, DC, (1994) pp. 174-175.

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