Quartz growth on X-seeds

Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing

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156DIG65, 156603, C30B 2918

Patent

active

045768080

ABSTRACT:
This invention concerns itself with a method for producing single crystal, seed material for use in growing synthetic quartz crystals. This seed material comprises a Z-faced seed crystal cut or sliced from the X-plus growing region of a synthetic quartz, single crystal boule.

REFERENCES:
patent: 3291575 (1966-12-01), Sawyer
patent: 3623847 (1971-11-01), Gehres et al.
patent: 3917506 (1975-11-01), Lind et al.
patent: 3976535 (1976-08-01), Barns
A. F. Armington et al, J. Crystal Growth, 49 (1980) 739-742.
A. F. Armington et al, 36th Annual Frequency Control Symposium, Marriott Hotel, Phila., PA, (2-4 Jun. 1952) 55-61.

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