Quartz glass substrate for polysilicon thin film transistor liqu

Details Quartz glass substrate for polysilicon thin film transistor liqu Quartz glass substrate for polysilicon thin film transistor liqu

1992-07-13

1994-07-19

Bell, Mark L.

Compositions: ceramic

Ceramic compositions

Glass compositions, compositions containing glass other than...

501 53, 501154, 428 1, 428426, C03C 300

Patent

active

053309413

ABSTRACT:
A quartz glass substrate for polysilicon thin film transistor liquid crystal display, in which a halogen content is not more than 10 ppm; an OH content is not more than 100 ppm; a total content of a heavy metal element and an alkali metal element is not more than 1 ppm; and an annealing point is not less than 1,150.degree. C.

REFERENCES:
patent: 3711262 (1973-01-01), Keck et al.
patent: 3772134 (1973-11-01), Rau
patent: 3776809 (1973-12-01), Baumler et al.
patent: 4979973 (1990-12-01), Takita et al.
patent: 5086352 (1992-02-01), Yamagata et al.
patent: 5141786 (1992-08-01), Shimizu et al.

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