Quartz glass crucible for pulling up silicon single crystal...

Details Quartz glass crucible for pulling up silicon single crystal... Quartz glass crucible for pulling up silicon single crystal...

2005-07-12

2005-07-12

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S208000, C117S213000, C117S900000, C065S017300, C065S060800, C065S071000, C065S144000

Reexamination Certificate

active

06916370

ABSTRACT:
An object of the invention is to provide a quartz glass crucible for pulling up silicon single crystal and a method for producing the same, suitable for improving the productivity of the crucible and the quality of the silicon single crystal, which, by forming a crystalline layer on the inner surface of the quartz glass crucible during pulling up silicon single crystal, prevents degradation from occurring on the inner surface of the crucible and increases the ratio of single crystal while preventing the dislocation from forming on the single crystals. The objects above have been accomplished by a quartz glass crucible for pulling up silicon single crystal, having a double layered structure comprising a naturally occurring quartz glass outer layer and a synthetic quartz glass inner layer, said synthetic quartz glass inner layer contains at least one type of an alkali metal ion selected from the group consisting of Na ion, K ion, and Li ion, which is diffused or moved from said naturally occurring quartz glass outer layer into said synthetic quartz glass inner layer.

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Patent Abstarcts of Japan for JP 04-022861, published Jan. 27, 1992.
Patent Abstarcts of Japan for JP 08-002932, published Jan. 9, 1996.

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