Quartz glass crucible for producing silicone single crystal and

Details Quartz glass crucible for producing silicone single crystal and Quartz glass crucible for producing silicone single crystal and

1998-09-30

2000-08-22

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

65 301, 65 33, 65DIG8, 427255, C30B 1520

Patent

active

061066109

ABSTRACT:
A method for producing an improved quartz glass crucible for pulling up silicon single crystals comprises forming a premolding by feeding powdered silicon dioxide into the mold and by then forming it into a layer along the inner surface of the mold; forming a crucible base body of a translucent quartz layer by heating the premolding from the inner side, thereby partially melting the powdered silicon dioxide, followed by cooling and solidifying the melt; forming a crystallization-promoter containing layer along the internal wall surface of the crucible body by scattering the crystallization promoter on the surface of the internal wall of the crucible body during or after forming the crucible base body; and forming a synthetic quartz glass inner layer by scattering and fusing a powder of silicon dioxide on the crystallization promoter-containing layer that is formed along the internal wall surface of the crucible base body.

REFERENCES:
patent: 3772134 (1973-11-01), Rau
patent: 3776809 (1973-12-01), Baumer et al.
patent: 4528163 (1985-07-01), Albrecht
patent: 4935046 (1990-06-01), Uchikawa et al.

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