Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-10-29
1999-05-11
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 23, 257 27, 333103, 333104, H01L45/00;29/08
Patent
active
059030100
ABSTRACT:
A quantum wire switch and a switching method for switching charge carriers between a first output and a second output utilizing quantum interference of the charge carriers. A quantum switch includes a quantum wire extending from an input to a first output, a second quantum wire extending from the input to a second output, and a third quantum wire extending between the first and second outputs, the three quantum wires together defining a ring. A controllable-length quantum wire electron stub tuner is connected to the ring. As charge carriers propagate from the input around the ring the stub tuner is used to control the quantum interference of the charge carriers resulting in local maxima and minima at various points around the ring. Setting the stub to a first length results in a local maximum at the first output and a local minimum at the second output, and the charge carriers can propagate to the first output and not the second output. Setting the stub to a second length reverses the locations of the local maxima and minima, and the charge carriers propagate to the second output but not the first output. The invention can also include a second controllable-length stub attached to the ring to increase switching efficiency. A quantum switch according to the invention can also act as a simple binary NOT logic gate or a simple binary AND logic gate.
REFERENCES:
patent: 5233205 (1993-08-01), Usagawa et al.
patent: 5453627 (1995-09-01), Aihara et al.
patent: 5640022 (1997-06-01), Inai
Ismail, Khalid et al., "Quantum Phenomena in Field-Effect-Controlled Semiconductor Nanostructures", Proc. IEEE, vol. 79, No. 8, Aug. 1991, pp. 1106-1116.
Sols, Fernando et al., "On the Possibility of Transistor Action based on Quantum Interference Phenomena", Appl. Phys. Lett. vol. 54, No. 4, Jan. 23, 1989, pp. 350-351.
Sols, Fernando et al., "Theory for a Quantum Modulated Transistor", J. Appl. Phy., vol. 66, No. 8, Oct. 15, 1989, pp. 3892-3906.
Aihara, Kimihisa, "Three-Terminal Operation of a Quantum Interference Device using a Quantum Wire with a Novel Stub Structure", Int. Elect. Dev. Mtg., 1992, pp. 18.5.1-4.
Ruedenberg, Klaus et al., "Free-Electron Network Model for Conjugated System I. Theory", J. Chem. Phys., vol. 21, No. 9, Sep. 1953, pp. 1565-1581.
Korotkov, Alexander, "Wireless Single-Electron Logic Biased by Alternating Electric Field", Applied Physics Lett. vol. 67, No. 16, Oct. 16, 1995, pp. 2412-2414.
Yacoby, A., et al., "Coherence and Phase Sensitive Measurements in a Quantum Dot", Physical Review Letters, vol. 74, No. 20, May 15, 1995, pp. 4047-4050.
Saito, Susumu, "Carbon Nanotubes for Next-Generation Electronics Devices", Science, vol. 278, Oct. 3, 1997, p. 77.
Collins, Philip et al., "Nanotube Nanodevice", Science, vol. 238, Oct. 3,1997, pp. 100-102.
Flory Curt A.
Williams R. Stanley
Guay John
Hewlett--Packard Company
LandOfFree
Quantum wire switch and switching method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Quantum wire switch and switching method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum wire switch and switching method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-246946