Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-05-25
1997-08-05
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 23, H01L 2712, H01L 4500
Patent
active
056545576
ABSTRACT:
A quantum wire structure includes a first layer having a thickness sufficiently smaller than a de Broglie wavelength of an electron wave in a medium, a second layer and a third layer which are disposed on and under the first layer and respectively have a forbidden band width larger than that of the first layer, wherein the first layer has a region with a relatively small curvature and a region with a relatively large curvature in its cross-section, and a width of the region with a relatively small curvature is 50 nm or less.
REFERENCES:
patent: 4974036 (1990-11-01), Kapon
Dzurko, K.M., et al., "Temperture engineered growth of lowthreshold quantum well lasers by metalorganic chemical vapor deposition" Appl. Phys. Lett. (1989) 54(2):105-107.
Physics and Applications of Semiconductor Superlattice, "Application of Superlattice II" (Nov. 10, 1984) pp. 210-211.
Turco et al., Journal of Crystal Growth (1990) 104(4):766-772.
Miller et al., Applied Physics Letters (1989) 54(2): 188-190.
K. Kojima et al., Extended Abstract 36th Spring Meeting 1989 The Japan Society of Applied Physics and the Related Society, entitled "Measurement of the Quansi-Quantum-Well Wire Effect in Single Quantum Wells on Gratings", pp. 975.
E. Kapon et al., Appl. Phys. Lett. (25 Dec. 1989) 55(26):2715-2717.
Kudo Hiroaki
Sugahara Satoshi
Takiguchi Haruhisa
Taneya Mototaka
Monin Donald
Optoelectronics Technology Research Laboratory
Sharp Kabushiki Kaisha
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