Quantum wire sensor and methods of forming and using same

Details Quantum wire sensor and methods of forming and using same Quantum wire sensor and methods of forming and using same

2011-08-09

2011-08-09

Sarkar, Asok K (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C257SE31086, C438S017000, C977S762000, C977S936000, C977S938000, C977S953000, C977S957000, C977S958000

Reexamination Certificate

active

07994593

ABSTRACT:
A solid-state field-effect transistor device for detecting chemical and biological species and for detecting changes in radiation is disclosed. The device includes a quantum wire channel section to improve device sensitivity. The device is operated in a fully depleted mode such that a sensed biological, chemical or radiation change causes an exponential change in channel conductance of the transistor.

REFERENCES:
patent: 5431883 (1995-07-01), Barraud
patent: 6433356 (2002-08-01), Cahen et al.
patent: 2002/0117659 (2002-08-01), Lieber et al.
patent: 2003/0231531 (2003-12-01), Baxter
patent: 2004/0079636 (2004-04-01), Hsia et al.
patent: 2004/0238379 (2004-12-01), Lindsay et al.
patent: 2006/0267051 (2006-11-01), Gstrein et al.
patent: 2 389 424 (2004-11-01), None
patent: 2 416 210 (2006-01-01), None
Yang, Jinman et al., Molecular Control of the Drain Current in a Buried Channel MOSFET.
Langmuir-Blodgett deposition of Porphyrin molecules for sensing applications.
Bouvet, Marcel, Phthalocyanine-based field-effect transistors as gas sensors, Anal. Bioanal. Chem. (2006) 384: 366-373.
Yang, Jinman et al., Molecular control of the threshold voltage of an NMOS inversion layer, Microelectronic Engineering 63 (2002) 135-139.
Laws, G. M., Drain current control in a hybrid molecular/MOSFET device, Physica E 17 (2003) 659-663.
Yang, Jinman et al., Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si:Si02 interface, J. Vac. Sci. Technol. B 20(4), Jul./Aug. 2002.
Takulapalli, Bharath, Molecular Sensing Using Monolayer Gate Fully Depleted Silicon on Insulator Nano MOSFETS, Aug. 2006.
Shepherd L. et al., Weak Inversion ISFETs for ultra-low power biochemical sensing and real-time analysis, Sensors and Actuators B, Elsevier Sequoia S.A., Lausanne, CH, vol. 107, No. 1, May 27, 2005, pp. 468-473. ISSN: 0925-4005.
Martinoia S. et al., A behavioral macromodel of the ISFET in SPICE, Sensors and Actuators B, Elsevier Sequoia S. A., Lausanne, CH, vol. 62, No. 3, Mar. 1, 2000, pp. 182-189. ISSN: 0925-4005.
Takulapalli Bharath, Detection of Pyridine using ZnTCPP SAM Coated SOI Mosfet Devices, Jun. 9, 2006.
Ashcroft, B., et al. Calibration of a PH Sensitive Buried Channel Silicon-on-Insulator MOSFET for Sensor Applications Jul. 28, 2004.

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