Quantum wire lasers

Coherent light generators – Particular active media – Semiconductor

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372 46, 257 14, H01S 319

Patent

active

058449302

ABSTRACT:
Quantum carrier confinement in a wire-like region defined by intersecting layers is significantly enhanced by various structural modifications of a conventional quantum wire device. In that way, operation of the device at room temperature and above is made feasible.

REFERENCES:
patent: 5363394 (1994-11-01), Pfeiffer et al.
Kapon et al, "Quantum Wire Heterostructures for Optoelectronic Applications", Superlattices and Microstructures, vol. 12 No 4, pp. 491-499, 1992.
Arai et al, "Fabrication Technology for Long-Wavelength GalnAs(P)/InP quantum-wire lasers by wet-chemical etching and OMVPE regrowth", Optoelectronics--Devices and Technologies, vol. 8 No. 4, pp. 461-478, Dec. 1993.

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