Quantum wire laser diode fabrication method

Details Quantum wire laser diode fabrication method Quantum wire laser diode fabrication method

1997-10-29

1999-05-18

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

438 43, 438 44, 438 47, H01L21/20

Patent

active

059044926

ABSTRACT:
A quantum wire laser diode fabrication method includes the steps of forming a buffer layer and an epitaxial layer sequentially on a substrate, forming a V-grooved pattern into the epitaxial layer to form a current blocking layer, and forming another buffer layer thereon, forming a quantum wire laser structure on the V-grooved pattern, forming a contact layer, and forming an electrode. The fabrication method employs a current blocking layer formed outside the V-grooved pattern to interrupt the current from flowing thereinto, for thereby enabling the current to only flow into the active layer, without requiring any subsequent processes which allow the current to efficiently flow into the active layer, and further obtaining the low threshold current.

REFERENCES:
patent: 5114877 (1992-05-01), Paoli et al.
patent: 5518955 (1996-05-01), Goto et al.
patent: 5571376 (1996-11-01), Bestwick et al.
T.G. Kim, et al., "Fabrication of V-Grooved Inner Stripe GaAs-A1GaAs Quantum-Wire Lasers", IEEE Photonics Technology Letters, vol. 9, No. 3, Mar. 1997, pp. 274-276.
T.G. Kim, et al., "V-Grooved GaAs/A1GaAs Quantum Wire Laser Array Confined By Junction-Isolation Stripes", Solid-State Electronics, vol. 41, No. 8, 1997, pp. 1079-1081.

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