Quantum wire laser

Details Quantum wire laser Quantum wire laser

1992-03-27

1994-01-18

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

052804933

ABSTRACT:
A quantum wire laser comprises a first multi-layer structure which is formed on a substrate and includes at least one first quantum well layer sandwiched by barrier layers, a second multi-layer structure which is formed on a laminated cross-section of the first multi-layer structure and is obtained by successively laminating a first barrier layer having a band gap larger than that of the first quantum well layer, a second quantum well layer having a band gap nearly equal to that of the first quantum well layer, and a second barrier layer having a band gap larger than those of the first and second quantum well layers, wherein a region for confining electrons is disposed in at least one of regions in the vicinity of the first quantum well layer and the second quantum well layer.

REFERENCES:
patent: 5070510 (1991-12-01), Konushi et al.
Fuki et al., Electronics Letter (16 Mar. 1989) 25(6):410-411.
Fukui et al., Japanese Journal of Applied Physics Extended Abstracts of the 22nd Conference on Solid State Devices and Materials (1990) Tokyo, Japan, pp. 753-756.
Japanese Patent Publication No. 60-113488 (19 Jun. 1985).
Moseley et al., Journal of Crystal Growth (1991) 108(1/2):203-218.
Simhony et al., Proc. Ann. Meeting IEEE Lasers and Electro-Optics Society (1990) 2:482-483.
Patent Abstracts of Japan (5 Oct. 1989) vol. 13, No. 444, (E-828) [3792].

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