Quantum wire gate device and method of making same

Details Quantum wire gate device and method of making same Quantum wire gate device and method of making same

2007-02-27

2007-02-27

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257SE29245, C257SE29275, C257S466000, C257S396000

Reexamination Certificate

active

11011327

ABSTRACT:
The present invention relates to a method of forming a quantum wire gate device. The method includes patterning a first oxide upon a substrate. Preferably the first oxide pattern is precisely and uniformly spaced to maximize quantum wire numbers per unit area. The method continues by forming a first nitride spacer mask upon the first oxide and by forming a first oxide spacer mask upon the first nitride spacer mask. Thereafter, the method continues by forming a second nitride spacer mask upon the first oxide spacer mask and by forming a plurality of channels in the substrate that are aligned to the second nitride spacer mask. A dielectric is formed upon the channel length and the method continues by forming a gate layer over the plurality of channels. Because of the inventive method and the starting scale, each of the plurality of channels is narrower than the mean free path of semiconductive electron flow therein.

REFERENCES:
patent: 5612255 (1997-03-01), Chapple-Sokol et al.
patent: 6063688 (2000-05-01), Doyle et al.
Kendall, D.L. “Far Beyond Microelectronics with Silicon”, The Norbert J. Kreidl Memorial Lecture, Holiday Inn Midtown, Oct. 30, 1995, section meeting MRS, ECS and RCS.

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