Coherent light generators – Particular active media – Semiconductor
Patent
1989-03-01
1991-03-12
Epps, Georgia
Coherent light generators
Particular active media
Semiconductor
372 49, 372 50, 372 99, 357 4, 357 17, 357 19, H01S 319
Patent
active
049998420
ABSTRACT:
Distributed feedback mirror cavities are found capable of sufficient reflectance-loss characteristics to permit lasing in two or a single quantum well structure in which lasing is in the thin (quantum) dimension. Such lasers sometimes known as "quantum well surface emitting lasers" are of sufficiently low threshold value as to permit use in integrated circuits of high integration density--e.g. at 1 micron design rules. Anticipated uses, now made possible, include optical circuitry for computer chip interconnect as well as optoelectric integrated circuits for many purposes including computing itself.
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K. Y. Lau et al., Ultimate Limit in Low Threshold Quantum Well GaAlAs Semiconductor Lasers, App. Physics Lett. 52 (2), Jan. 11, 1988.
J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth, vol. 27, p. 118 (1974 Jul.).
A. Y. Cho, "Film Deposition by Molecular-Beam Techniques", J. of Vac. Science and Technology, vol. 8, p. 531 (Jun. 25, 1971).
R. D. Dupuis, High Efficiency GaAlAs/Heterostructure Solar Cells Grown by Metalorganic Chemical Vapor Deposition, Applied Phys. Letters, vol. 31, Aug. 1, 1977.
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Huang Kai-Feng
Jewell Jack L.
McCall, Jr. Samuel L.
Tai Kuochou
AT&T Bell Laboratories
Epps Georgia
Indig G. S.
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