Quantum-well type semiconductor laser device having multi-layere

Details Quantum-well type semiconductor laser device having multi-layere Quantum-well type semiconductor laser device having multi-layere

1994-12-27

1997-06-24

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

056423721

ABSTRACT:
The present invention provides a quantum-well semiconductor laser device having a substrate, a clad layer on the substrate, an optical confinement layer on the clad layer, an active layer on the optical confinement layer, an optical confinement layer on the active layer and a clad layer on the optical confinement layer each of which formed of a semiconductor wherein the active layer formed of a multi-layer quantum-well structure of which each layer comprising a quantum-well layer, a first barrier layer adjacent the quantum-well layer and a second barrier layer adjacent the first barrier layer wherein the semiconductor of the first barrier has a higher energy level at a .GAMMA. point of a valence band than that of the second barrier layer.

REFERENCES:
patent: 5351254 (1994-09-01), Tomita
patent: 5425041 (1995-06-01), Seko et al.
patent: 5425042 (1995-06-01), Nida et al.
Patent Abstracts of Japan, vol. 17, No. 213 (E-1356), 26 Apr. 1993.
Patent Abstracts of Japan, vol. 11, No. 212 (E-522), 9 Jul. 1987.
Yuh, Perng-Fei, et al., "Novel Infrared Band-Aligned Superlattice Laser", Applied Physics Letters, vol. 51, No. 18, Nov. 2, 1987, New York, pp. 1404-1406.
Hirayama, H., et al., "Estimation of Carrier Capture Time of Quantum-Well Lasers by Spontaneous Emission Spectra", Applied Physics Letters, vol. 61, No. 20, Nov. 16, 1992, New York, pp. 2398-2400.

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