Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-09-28
1994-03-29
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 39, 257 21, 257 85, 257919, 257 97, 359248, 372 45, 372 46, 372 44, H01L 2714
Patent
active
052987620
ABSTRACT:
A semiconductor-insulator-semiconductor (SIS) structure diode device for providing fast optoelectronic switching with stimulated emission. The device includes a substrate which has a buffer layer disposed on top thereof. An n-type cladding layer is disposed on top of the buffer layer. An undoped i-region is disposed on top of the buffer layer. The i-region includes at least one quantum well disposed between two waveguide layers. A lightly doped p-type cladding layer is disposed on top of the i-region. A contact layer is further disposed on top of the p-type cladding layer. First and second contact terminals are included for providing a two-terminal device. The diode advantageously provides good lasing performance, significant negative differential resistance and strong light sensitivity. In an alternate embodiment, a third terminal is connected to the undoped i-region to thereby form a three terminal device.
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Goldstein Sol L.
Mintel William
TRW Inc.
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