Quantum well superluminescent diode

Details Quantum well superluminescent diode Quantum well superluminescent diode

1994-02-25

1996-09-17

Picardat, Kevin M.

Fishing, trapping, and vermin destroying

437126, 437127, 437129, 437904, H01L 21265

Patent

active

055567959

ABSTRACT:
A quantum well is formed in the active region of a superluminescent diode by limiting the active region to a thickness on the order of the carrier deBroglie wavelength. Increased efficiency of recombination of electrons and holes due to the existence of the quantum well allows operation at threshold currents which are substantially proportional to cavity length. Variation in threshold current with temperature is also reduced.

REFERENCES:
patent: 4634928 (1987-01-01), Figueroa et al.
patent: 4730331 (1988-03-01), Burnham et al.
patent: 4764934 (1988-08-01), Kwong et al.
patent: 4787089 (1988-11-01), Hayakawa et al.
patent: 4789881 (1988-12-01), Alphonse
patent: 4821276 (1989-04-01), Alphonse et al.
patent: 4821277 (1989-04-01), Alphonse et al.
patent: 4841533 (1989-06-01), Hayakawa et al.
patent: 4843032 (1989-06-01), Tokuda et al.
patent: 4845724 (1989-07-01), Hayakawa et al.
patent: 4856014 (1989-08-01), Figuero et al.
patent: 4888784 (1989-12-01), Hirata
patent: 4896195 (1990-01-01), Jasen et al.
patent: 4901123 (1990-02-01), Noguchi et al.
patent: 4905246 (1990-02-01), Hayakawa et al.
patent: 4916708 (1990-04-01), Hayakawa
patent: 4952019 (1990-08-01), Evans et al.
patent: 5008889 (1991-04-01), Wilson
patent: 5022036 (1991-06-01), Suyama et al.
patent: 5036371 (1991-07-01), Schwartz
patent: 5040032 (1991-08-01), Kapon
patent: 5126803 (1992-06-01), Hager et al.
"High-power low divergence superradiance diode"; C. W. Wang; APL 41(7); Oct. 1982, pp. 587-589.
"A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beam"; W. T. Tsang; APL 39(2), Jul. 15, 1981; pp. 134-136.
"High-Power Superluminescent Diodes"; Gerard A. Alphonse et al.; 1988 IEEE, vol. 24, No. 12, Dec. 1988; pp. 2454-2457.
"Quantum-Well Heterostructure Lasers"; Nick Holonyak, Jr., et al.; IEEE Journal Vol. QE-16, No. 2; Feb. 1980; pp. 170-184.
"High-Power Ridge-Waveguide AlGaAs GRIN-SCH Laser Diodes"; C. Harder et al.; Electronics Letters, vol. 22, No. 20; Sep. 1988; pp. 1081-1082.
"Ultralow-threshold graded-index separate-confinement single quantum well buried heterostructure (Al,Ga) As lasers with high reflectivity coatings"; Pamela L. Derry et al.; APL 50(25); 22 Jun. 1987; pp. 1773-1775.
"Scaling laws and minimum threshold currents for quantum-confined semiconductor lasers"; Amnon Yariv; APL 53(12); Sep. 1988; pp. 1033-1035.

Affiliated with

Also associated with

Rating

Quantum well superluminescent diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Quantum well superluminescent diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum well superluminescent diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-412745