Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-03-02
1993-06-01
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 18, 257 20, 257 22, 257 24, 257 25, 257411, 372 45, H01L 2714
Patent
active
052162621
ABSTRACT:
A quantum well structure useful for semiconducting devices comprises two barrier regions and a thin epitaxially grown monocrystalline semiconductor material quantum well sandwiched between said barrier regions. Each barrier region consists essentially of alternate strain layers forming a superlattice, each of said layers being thinner than said quantum well. The layers are so thin that no defects are generated as a result of the release of stored strain energy.
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